1 cghv59070 70 w, 4.4-5.9 ghz, 50 v, rf power gan hemt crees cghv59070 is an internally matched gallium nitride (gan) high electron mobility transistor (hemt). the cghv59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the cghv59070 ideal for linear and compressed amplifer circuits. the transistor is available in a fange and pill package. re v 1.0 - a ugu st 2016 package type: 440224, 440170 pns: cghv59070f, cghv59070p typical performance over 4.8 - 5.9 ghz (t c = 25?c) parameter 4.8 ghz 5.0 ghz 5.2 ghz 5.4 ghz 5.6 ghz 5.8 ghz 5.9 ghz units power gain at 50 v 13.7 14.2 14.5 14.6 14.3 13.7 13.3 db output power at 50 v 84 93 101 102 95 84 76 w drain effciency at 50 v 55 56 57 56 54 50 48 % note: measured in cghv59070f-amp (838269) under 100 s pulse width,10% duty, pin = 35.5 dbm (3.5 w) features ? 4.4 - 5.9 ghz operation ? 90 w p out typical at 50 v ? 14 db power gain ? 55 % drain effciency ? internally matched applications ? marine radar ? weather monitoring ? air traffc control ? maritime vessel traffc control ? port security ? troposcatter communications ? beyond line of sight - blos ? satellite communications preliminary subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 150 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 10.4 ma 25?c maximum drain current 1 i dmax 6.3 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case 3 r jc 2.99 ?c/w 85?c, cw @ p diss = 57 w thermal resistance, junction to case 3 r jc 0.85 ?c/w 85?c, 100 sec, 10% duty cycle @ p diss = 70 w case operating temperature 2 t c -40, +150 ?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 simulated for the cghv59070f at p diss = 57.6 cw or p diss = 70 w pulsed 4 see also, the power dissipation de-rating curve on page 8. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -2.8 -2.3 v dc v ds = 10 v, i d = 10.4 ma saturated drain current 2 i ds 7.8 10.4 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 10.4 ma rf characteristics 3 (t c = 25 ? c, f 0 = 2.5 ghz unless otherwise noted) output power p out1 C 100 C w v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.2 ghz output power p out1 C 95 C w v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.55 ghz output power p out1 C 76 C w v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.9 ghz drain effciency eff 1 C 57 C % v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.2 ghz drain effciency eff 2 C 54 C % v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.55 ghz drain effciency eff 3 C 48 C % v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.9 ghz power gain pg 1 C 14.5 C db v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.2 ghz power gain pg 2 C 14.3 C db v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.55 ghz power gain pg 3 C 13.3 C db v dd = 50 v, i dq = 0.15 a, p in = 35.5 dbm, freq = 5.9 ghz output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 0.15a, p in = 35.5 dbm pulsed dynamic characteristics input capacitance c gs C 36 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 109 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.26 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 measured in cghv59070f-amp 4 drain effciency = p out / p dc cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance figure 1 - small signal gain and return losses of the cghv59070-amp vs frequency v dd = 50 v, i dq = 150 ma figure 2 - power gain, drain effciency, and output power vs frequency measured in amplifer circuit cghv59070p-amp v dd = 50 v, i dq = 150 ma, p in = 35.5 dbm, pulse width = 100 sec, duty cycle = 10% -5 0 5 10 15 20 sm al l si g n al gai n , i n p u t r etu r n l o ss, ou t p u t r etu r n l o ss ( d b ) cghv59070 s-parameter v d =50v,i d =150ma -30 -25 -20 -15 -10 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 6600 6800 7000 sm al l si g n al gai n , i n p u t r etu r n l o ss, ou t p u t r etu r n l o ss ( d b ) frequency (mhz) s11 s21 s22 50 60 70 80 90 100 110 ou t p u t po w er ( w ) , po w er gai n ( d b ) , ef f i ci en cy ( % ) cghv59070 pout (w), drain eff & gain @ pin 35.5 dbm v d =50v,i d =150ma pulsed 100us,10% 0 10 20 30 40 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 ou t p u t po w er ( w ) , po w er gai n ( d b ) , ef f i ci en cy ( % ) frequency (ghz) p gain (db) eff (%) pout (w) cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance figure 3 - maximum available gain and k factor of the cghv59070 v dd = 50 v, i dq = 150 ma figure 4 - power gain, drain effciency and output power vs input power of the cghv59070 v dd = 50 v, i dq = 150 ma, pulse width = 100 sec, duty cycle = 10% 5 6 7 8 9 10 25 30 35 40 45 50 gm ax ( d b ) gmax & k-factor v d =50v, i d =150 ma g max k k 0 1 2 3 4 0 5 10 15 20 0 1000 2000 3000 4000 5000 6000 7000 8000 gm ax ( d b ) frequency (mhz) 0 10 20 30 40 50 60 0 20 40 60 80 100 120 16 18 20 22 24 26 28 30 32 34 36 drain efficiency (%) output power (w), gain (db) input power (dbm) cghv59070 gain & drain efficiency and pout vs input power vd=50v,id=150ma, pulsed 100us, 10% 5.20ghz, pout 5.55ghz, pout 5.90ghz, pout 5.20ghz, gain 5.55ghz, gain 5.90ghz, gain 5.20ghz, eff 5.55ghz, eff 5.90ghz, eff cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 simulated source and load impedances frequency (mhz) z source z load 4400 2.6 - j12.9 14.0 - j6.9 4600 3.8 - j14.2 15.0 - j6.7 4800 5.8 - j15.3 16.0 - j7.0 5000 8.8 - j15.4 16.7 - j8.0 5200 8.8 - j14.7 17.1 - j9.1 5300 8.5 - j14.5 16.9 - j10.0 5400 8.1 - j14.2 16.5 - j10.7 5500 7.8 - j13.9 15.4 - j11.4 5600 7.5 - j13.6 15.4 - j12.0 5700 7.2 - j13.3 14.6 - j12.5 5800 6.9 - j13.3 13.8 - j12.8 5900 6.6 - j12.7 12.9 - j13.1 note 1. v dd = 50 v, i dq = 150 ma in the 440224 package. note 2. optimized for power gain, p sat and pae. note 3. when using this device at low frequency, series resistors should be used to maintain amplifer stability. cghv59070 power dissipation de-rating curve, cw and pulse (100 sec, 10%) d z source z load g s cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 cghv59070-amp demonstration amplifer circuit schematic cghv59070-amp demonstration amplifer circuit outline cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 cghv59070-amp demonstration amplifer circuit bill of materials designator description qty r1 res, 15,ohm, +/- 1%, 1/16w, 0402 1 r2 res,1/16w,0603,1%,10.0 ohms 1 c1 cap, 4.7 pf,+/-0.1pf, 0603, atc600s 1 c10 cap, 1.3 pf,+/-0.1pf, 0603, atc600s 1 c3,c11 cap, 2.0 pf,+/-0.1pf, 0603, atc600s 1 c2 cap, 2.0 pf, +/- 0.05 pf, 0402, atc 1 c4,c12 cap, 10pf,+/-5%, 0603, atc 2 c5,c13 cap, 470pf, 5%, 100v, 0603, x 2 c6,c14 cap, 33000pf, 0805,100v, x7r 2 c15 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c7 cap 10uf 16v tantalum 1 w1 cable ,18 awg, 4.2 inch 1 c16 cap, 470uf, 20%, 80v, elect, smd size k 1 j1,j2 conn, sma, panel mount jack, flange, 4-hole 2 j3 header rt>plz .1cen lk 9pos 1 j4 connector ; smb, straight, jack,smd 1 cghv59070-amp demonstration amplifer circuit cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 product dimensions cghv59070f (package type 440224) product dimensions cghv59070p (package type 440170) ? cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 product ordering information order number description unit of measure image cghv59070f gan hemt each cghv59070p gan hemt each CGHV59070F-TB test board without gan hemt each cghv59070f-amp test board with gan hemt installed each cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv59070 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
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